I mean, they all do, but this is still a pretty impressive experiment:
The devices presented here are 30nm thick, and the switching current is 50 μA - an order of magnitude smaller than that of PRAM. They also demonstrated an endurance of greater than 1012 switching cycles (higher than the previous best of 1010 and six orders of magnitude higher than that of flash memory at 104-106). The device has a switching time of 10ns, and a data retention time estimated to be 10 years at 85°C. This type of RRAM also appears to work without problems in a vacuum, unlike previously-demonstrated devices.